DocumentCode
2168312
Title
Ka-Band High Power GaN SPDT Switch MMIC
Author
Xiaosu Zheng ; Tremblay, John C. ; Huettner, Steven E. ; Ip, Kelly P. ; Papale, Thomas ; Lange, Krista L.
Author_Institution
Raytheon, Andover, MA, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
5
Abstract
A Ka-Band high power GaN/SiC reflective SPDT Switch MMIC is demonstrated with unprecedented 49dBm P1dB and at least 58dBm survival threshold. The key enabling semiconductor technology is Raytheon´s mm-Wave GaN HEMT with 1.36 ohm-mm Ron and 0.131 pF/mm Coff. Measured insertion loss is better than 1.3 dB over 27-31 GHz, and the minimum insertion loss of 0.8 dB has achieved at higher frequencies. Measured isolation is greater than 25 dB over 27-31 GHz, with the highest isolation of 30 dB at higher frequencies.
Keywords
III-V semiconductors; MIMIC; gallium compounds; high electron mobility transistors; microwave switches; microwave transistors; silicon compounds; wide band gap semiconductors; GaN-SiC; Ka-band high power SPDT switch MMIC; Raytheon´s mmwave HEMT; frequency 27 GHz to 31 GHz; insertion loss; isolation measurement; reflective SPDT Switch MMIC; semiconductor technology; Gallium nitride; Insertion loss; Integrated circuit modeling; Loss measurement; MMICs; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659234
Filename
6659234
Link To Document