Title :
A model for anomalous leakage current in flash memories and its application for the prediction of retention characteristics
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
Abstract :
The mechanism of anomalous leakage current (ALC) which induces anomalous retention failure in flash memory devices has been studied utilizing the modified floating gate technique. Based on the model, a new prediction method for retention failure rate has been proposed, which realizes drastic shortening of the quality assurance approaches.
Keywords :
failure analysis; flash memories; integrated circuit modelling; integrated circuit reliability; leakage currents; semiconductor device breakdown; MOS capacitor; anomalous leakage current model; anomalous retention failure; dielectric breakdown; flash memories; modified floating gate technique; nMOSFETs; quality assurance shortening; reliability theory; retention characteristics; retention failure rate prediction; tunnel oxides; Automatic logic units; Degradation; Flash memory; Flash memory cells; Leakage current; MOSFETs; Nonvolatile memory; Prediction methods; Predictive models; Quality assurance;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979609
