Title :
K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure
Author :
Liang-Hung Lu ; Jae-Sung Rieh ; Bhattacharya, P. ; Katehi, L.P.B. ; Croke, E.T. ; Ponchak, G.E. ; Alterovitz, S.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92/spl times/0.67 mm/sup 2/.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; lumped parameter networks; micromachining; semiconductor materials; silicon; 52 GHz; K-band Si/SiGe HBT MMIC amplifier; Si-SiGe; heterojunction bipolar transistor; lumped passive components; micromachined structure; Etching; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; K-band; MMICs; Millimeter wave technology; Molecular beam epitaxial growth; Silicon germanium; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682038
