Title :
Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications
Author :
Komiak, J.J. ; Smith, P.M. ; Duh, K.H.G. ; Xu, D. ; Chao, P.C.
Author_Institution :
Electron. Syst., BAE Syst., Nashua, NH, USA
Abstract :
This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate-length (50-100 nm) Metamorphic High Electron Mobility Transistors have been optimized for high gain and low noise performance. Efforts to further improve performance, manufacturability, and verify reliability will be reported. We also describe the design and performance of low noise MMIC amplifiers based on this technology.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; low noise amplifiers; GaAs; low noise MMIC amplifiers; low noise performance; metamorphic HEMT technology; metamorphic high electron mobility transistors; microwave applications; size 50 nm to 100 nm; submillimeter-wave applications; Gallium arsenide; Indium phosphide; Logic gates; MMICs; Noise; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659237
