DocumentCode
2168463
Title
Current status and prospects of ferroelectric memories
Author
Ishiwara, H.
Author_Institution
Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Current status and prospects of ferroelectric random access memories (FeRAMs) are reviewed. First, novel ferroelectric materials, which are suitable for both low temperature crystallization and low voltage operation are introduced. Then, various cell structures in FeRAMs are discussed, in which particular attention is paid to non-destructive-readout-type cells such as a 1T-type cell composed of a single ferroelectric-gate FET. Finally, a novel 1T2C-type non-destructive-readout cell with good data retention characteristic is introduced and its basic operation is presented.
Keywords
crystallisation; ferroelectric storage; low-power electronics; nondestructive readout; random-access storage; 1T-type cell; 1T2C-type cell; data retention; ferroelectric random access memory; ferroelectric-gate FET; low temperature crystallization; low voltage operation; nondestructive readout; Capacitors; Crystalline materials; Crystallization; FETs; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979615
Filename
979615
Link To Document