Evaluation of Ultra Thin Body Si-On-ONO (UTB SOONO) transistors using ultra thin spacer technology

Author

Bae, Hyun Jun ; Kim, Sung Hwan ; Hong, Sung In ; Choi, Yong Lack ; Song, Ho Ju ; Oh, Chang Woo ; Kim, Dong-Won ; Park, Donggun ; Oh, Kyungseok ; Lee, Won-Seong

Author_Institution

R&D Center, Samsung Electron. Co., Yongin

fYear

2008

fDate

2-4 June 2008

Firstpage

5

Lastpage

8

Abstract

Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30% compared with conventional UTB SOONO transistors with thick spacer due to reduced source/drain resistance without short channel effect degradation by using thin spacer. In this paper, it is shown that thin spacer technology is very attractive to UTB SOI device in terms of device performance and process simplicity.

Keywords

silicon-on-insulator; transistors; UTB SOI device; driving current; short channel effect degradation; source/drain resistance; ultra thin body Si-On-ONO transistors; ultra thin spacer technology; CMOS process; Degradation; Fabrication; Germanium silicon alloys; Immune system; Research and development; Silicon germanium; Silicon on insulator technology; Space technology; Transistors; SOI; UTB SOONO; thin spacer;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-1810-7

Electronic_ISBN

978-1-4244-1811-4

Type

conf

DOI

10.1109/ICICDT.2008.4567233

Filename

4567233