Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress

Author

Hirose, Masanobu ; Matsushita, Kazuki ; Takagi, Kazuyoshi ; Tsuda, Kazuhiko

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki, Japan

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

A numerical device model is proposed for the design of reliable AlGaN/GaN HEMT structures. In the model, shear stress due to the inverse piezoelectric effect is used to predict high-temperature DC stress test results. The calculated shear stress is compared with test results for various AlGaN/GaN HEMT structures. The comparison shows that structures passing the test have shear stress lower than 0.19 GPa under the test conditions. An AlGaN/GaN HEMT structure for the Ka band was designed so that stress would be lower than this value. The designed structure was fabricated and passed the test. These results indicate that the model can be used to design reliable AlGaN/GaN HEMT structures.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; piezoelectricity; semiconductor device models; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HEMT structure design; high-temperature DC stress test results; inverse piezoelectric effect; numerical device model; shear stress; test conditions; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Reliability; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659242

Filename

6659242