Impact of quantum mechanical effects on design of nano-scale narrow channel n- and p-type MOSFETs

Author

Majima, H. ; Saito, Y. ; Hiramoto, T.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

The impact of quantum mechanical effects and device design guidelines in nano-scale narrow channel n-type and p-type MOSFETs is presented. Ultra-narrow channel MOSFETs with n- and p-type source/drain have been successfully fabricated and threshold voltage increase due to quantum confinement has been clearly observed in both n- and p-type devices. By analytical calculations, device design for threshold voltage adjustment in n- and p-type MOSFETs using quantum mechanical effects is discussed. The calculations also demonstrate that an ultra-narrow channel along the <100> direction has a large advantage in device design over the <110> direction due to higher mobility.

Keywords

MOSFET; electron mobility; hole mobility; nanotechnology; quantum interference phenomena; semiconductor device measurement; semiconductor device models; silicon-on-insulator; 10 nm; [100] bonded SOI wafer; [100] direction; [110] direction; analytical calculations; device design guidelines; electron mobility; hole mobility; n-type MOSFETs; nano-scale narrow channel MOSFET design; p-type MOSFETs; quantum confinement; quantum mechanical effects; threshold voltage adjustment; threshold voltage increase; Electron beams; Fabrication; Guidelines; Lithography; MOSFETs; Nanoscale devices; Potential well; Quantum mechanics; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979618

Filename

979618