Title :
Use of the p-floating shielding layer for improving electric field concentration of the recessed gate
Author :
Hwang, Sang Jun ; Yu, Seung Woo ; Lee, Jae In ; Kang, Ey-Goo ; Sung, Man Young
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul
Abstract :
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn´t have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdown voltage decreases.
Keywords :
electric breakdown; insulated gate bipolar transistors; JFET region; breakdown voltage; electric field concentration; on-state voltage drop; p-floating shielding layer; recessed gate IGBT; Breakdown voltage; Electric variables; Fabrication; Immune system; Implants; Information technology; Insulated gate bipolar transistors; Low voltage; Medical simulation; Switches; IGBT; Recessed gate; Shielding layer; p floating;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567235
