Title :
A new high-performance poly-Si TFT by simple excimer laser annealing on selectively floating a-Si layer
Author :
Kim, C.H. ; Song, I.H. ; Jung, S.H. ; Han, M.K.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new poly-Si TFT with a single grain-boundary has been fabricated by a simple ELA method which employs a selectively floating a-Si active layer. A thermally insulating air-gap between the floating a-Si and substrate successfully induces the lateral grain growth. Large lateral grains exceeding 4 /spl mu/m have been grown by a single laser irradiation with wide ELA process window. The proposed poly-Si TFT exhibits high mobility of 331 cm/sup 2//V sec due to the high-quality grains.
Keywords :
carrier mobility; elemental semiconductors; grain boundaries; grain growth; grain size; laser beam annealing; silicon; thin film transistors; Si; air gap; carrier mobility; excimer laser annealing; grain boundary; grain size; lateral grain growth; polysilicon TFT; selectively floating a-Si layer; Air gaps; Annealing; Grain size; Optical films; Scanning electron microscopy; Semiconductor films; Substrates; Temperature; Thermal conductivity; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979623
