• DocumentCode
    2168650
  • Title

    Transistor Laser for Electronic-Photonic Integrated Circuits

  • Author

    Feng, Ming ; Holonyak, Nick

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2013
  • fDate
    13-16 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the "transistor laser" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.
  • Keywords
    electron-hole recombination; heterojunction bipolar transistors; integrated optics; integrated optoelectronics; quantum well lasers; direct modulation bandwidth; electronic-photonic integrated circuits; quantum wells; recombination lifetime; semiconductor laser; tilted charge; transistor laser; Cavity resonators; Integrated optics; Laser modes; Radiative recombination; Semiconductor lasers; Stimulated emission; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2013.6659247
  • Filename
    6659247