DocumentCode
2168650
Title
Transistor Laser for Electronic-Photonic Integrated Circuits
Author
Feng, Ming ; Holonyak, Nick
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the "transistor laser" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.
Keywords
electron-hole recombination; heterojunction bipolar transistors; integrated optics; integrated optoelectronics; quantum well lasers; direct modulation bandwidth; electronic-photonic integrated circuits; quantum wells; recombination lifetime; semiconductor laser; tilted charge; transistor laser; Cavity resonators; Integrated optics; Laser modes; Radiative recombination; Semiconductor lasers; Stimulated emission; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659247
Filename
6659247
Link To Document