Title :
A 1-157 GHz InP HEMT traveling-wave amplifier
Author :
Agarwal, B. ; Schmitz, A.E. ; Brown, J.J. ; Le, M. ; Lui, M. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report traveling wave amplifiers with 1-157 GHz 3-dB bandwidth, 5 dB gain. These amplifiers were fabricated in a 0.1 /spl mu/m gate length InGaAs/InAlAs HEMT MMIC technology. The use of gate-line capacitive-division and low-loss elevated coplanar waveguide lines have yielded record bandwidth broadband amplifiers.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; indium compounds; travelling wave amplifiers; wideband amplifiers; 0.1 micron; 1 to 157 GHz; 5 dB; InGaAs-InAlAs; InGaAs/InAlAs HEMT MMIC technology; InP; InP HEMT traveling-wave amplifier; broadband amplifier; coplanar waveguide; gate-line capacitive-division; Bandwidth; Broadband amplifiers; Coplanar waveguides; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical waveguides; Propagation losses;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682039
