Title :
Cold-FET ENR Characterisation Applied to the Measurement of On-Wafer Transistor Noise Parameters
Author :
Maya, M.C. ; Lázaro, A. ; Pradell, L.
Author_Institution :
Universitat Politecnica de Catalunya (UPC), Dept. TSC, Campus Nord UPC - Mòdul D3, 08034, Barcelona - Spain, fax: +34-93-4017232, email: mcmaya@tsc.upc.es
Abstract :
This paper presents a method to characterize the Excess Noise Ratio (ENR) of a Cold - FET (Vds=0V) with the gate reverse-biased, for its application to the measurement of on - wafer FET noise parameters over the microwave and millimetre - wave ranges. The characterisation is performed by determination of a device broadband noise circuit - model, from its measured S-parameters and noise powers. Experimental results up to 40 GHz are given.
Keywords :
Circuit noise; Microwave FETs; Microwave devices; Microwave measurements; Microwave theory and techniques; Microwave transistors; Noise measurement; Performance evaluation; Semiconductor device modeling; Signal to noise ratio;
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
DOI :
10.1109/EUMA.2002.339216
