DocumentCode
2168718
Title
Quantum tunneling Sb-heterostructure millimeter-wave diodes
Author
Schulman, J.N. ; Croke, E.T. ; Chow, D.H. ; Dunlap, H.L. ; Holabird, K.S. ; Morgan, M.A. ; Weinreb, S.
Author_Institution
HRL Labs., Malibu, CA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; millimetre wave diodes; millimetre wave imaging; radiometry; tunnel diodes; 110 GHz; InAs-AlSb-GaSb; InAs/AlSb/GaSb nanostructure; Sb-heterostructure; bandwidth; millimeter-wave diode; passive millimeter-wave imaging; quantum tunneling; sensitivity; square law radiometry; zero bias; Electrons; Frequency; Laboratories; Millimeter wave technology; Photonic band gap; Reproducibility of results; Semiconductor diodes; Space exploration; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979627
Filename
979627
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