DocumentCode
2168778
Title
High-speed InP/InGaAs DHBTs with ballistic collector launcher structure
Author
Fujihara, A. ; Ikenaga, Y. ; Takahashi, H. ; Kawanaka, M. ; Tanaka, S.
Author_Institution
Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high f/sub max/ (/spl sim/300 GHz) while maintaining high f/sub T/ (/spl sim/200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high f/sub T/ and high f/sub max/.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; 200 GHz; 300 GHz; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; ballistic collector launcher structure; carrier transport; current gain cut-off frequency; high-speed operation; maximum frequency of operation; Bipolar transistors; Doping; Double heterojunction bipolar transistors; Electrons; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; National electric code;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979629
Filename
979629
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