A study of LBO effects in a 40 nm SA-MSCFET

Author

Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Kang, Shiang-Shi

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung

fYear

2008

fDate

2-4 June 2008

Firstpage

67

Lastpage

70

Abstract

This work aims to examine and analyze carefully the effects of block oxide length (L_BO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs). Because the research of the block oxide height (H_BO) has already been done as described in [1], in this study we will focus on the influence of L_BO on the SA-MSCFET. Also, some preliminary characteristics of the new configuration developed are demonstrated by using TCAD simulations.

Keywords

field effect transistors; technology CAD (electronics); MSCFET; TCAD simulations; block oxide height; block oxide length; multi-substrate-contact field-effect transistor; self-aligned gate-to-body technique; short-channel effects; Boron; CMOS technology; Epitaxial growth; Etching; FETs; Insulation; Numerical simulation; Silicon on insulator technology; Sputtering; Substrates; block oxide height (HBO); block oxide length (LBO); multi-substrate-contact field-effect transistor (MSCFET); self-aligned (SA); short-channel effects (SCEs);

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-1810-7

Electronic_ISBN

978-1-4244-1811-4

Type

conf

DOI

10.1109/ICICDT.2008.4567248

Filename

4567248