One-transistor PZT/Al/sub 2/O/sub 3/, SBT/Al/sub 2/O/sub 3/ and BLT/Al/sub 2/O/sub 3/ stacked gate memory

Author

Yang, M.Y. ; Chen, S.B. ; Chin, A. ; Sun, C.L. ; Lan, B.C. ; Chen, S.Y.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub 2/O/sub 3/ gate dielectrics. The SBT/Al/sub 2/O/sub 3/ FeMOSFET has the largest I/sub ON//I/sub OFF/ of greater than 2 orders of magnitude, and the PZT/Al/sub 2/O/sub 3/ FeMOSFET has the fast 10 ns program/erase time, >10/sup 11/ program/erase endurance, and 10 years retention.

Keywords

MOSFET; alumina; bismuth compounds; ferroelectric storage; lanthanum compounds; lead compounds; semiconductor storage; strontium compounds; BLT/Al/sub 2/O/sub 3/ gate dielectric; Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/-Al/sub 2/O/sub 3/; PZT-Al/sub 2/O/sub 3/; PZT/Al/sub 2/O/sub 3/ gate dielectric; PbZrO3TiO3-Al2O3; SBT/Al/sub 2/O/sub 3/ gate dielectric; SrBi/sub 2/Ta/sub 2/O/sub 9/-Al/sub 2/O/sub 3/; ferroelectric MOSFET; one-transistor stacked gate memory; Artificial intelligence; Bismuth; Dielectrics; Ferroelectric films; Ferroelectric materials; Flash memory; MOS capacitors; MOSFET circuits; Nonvolatile memory; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979634

Filename

979634