Title :
TDDB and BTI reliabilities of high-k stacked gate dielectrics - Impact of initial traps in high-k layer -
Author :
Okada, Kenji ; Ota, Hiroyuki ; Nabatame, Toshihide ; Toriumi, Akira
Author_Institution :
MIRAI-ASET, Tsukuba
Abstract :
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
Keywords :
electric breakdown; high-k dielectric thin films; leakage currents; reliability; thermal stability; BTI reliabilities; TDDB reliabilities; generated subordinate carrier injection model; high-k layer; high-k stacked gate dielectrics; initial traps; leakage current; Breakdown voltage; Charge carrier processes; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; High K dielectric materials; High-K gate dielectrics; Materials reliability; Tunneling;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567253
