DocumentCode
2169008
Title
Influence of backside metallization on a coplanar X-band LNA
Author
Follmann, R. ; Langgartner, G. ; Borkes, J. ; Wolff, I. ; Feldle, H.P.
Author_Institution
IMST GmbH, D-47475 Kamp-Lintfort, Germany. e-mail: follmann@imst.de
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
In this paper the influence of the backside metallization on a coplanar X-band low noise amplifier MMIC is described. First, we demonstrate the selection of transistor devices including the modelling especially with respect to the extraction of RF noise parameters. After that the simulation results and the layout of the LNA are presented, neglecting backside effects on coplanar circuits. Completing measurements on the fabricated LNA show the influence of the backside metallization in comparison with simulation results.
Keywords
Circuit noise; Circuit simulation; Equivalent circuits; Integrated circuit noise; Low-noise amplifiers; Metallization; Noise figure; Radio frequency; Roentgenium; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339226
Filename
4140306
Link To Document