DocumentCode
2169031
Title
A Miniaturized 0.5-Watt Q-band 0.25-μm GaAs PHEMT High Power Amplifier MMIC
Author
Bessemoulin, A. ; Quentin, P. ; Thomas, H. ; Geiger, D.
Author_Institution
Member, IEEE, United Monolithic Semiconductors, route departementale 128 - BP46, F-91401 Orsay Cedex, France. Ph. (+33) 1 69 33 05 46 - Fax. (+33) 1 69 33 05 52, email: alexandre.bessemoulin@ums-gaas.com
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
The performance of a very compact power amplifier MMIC for Q-band applications is reported. Using a 4-inch 0.25-μm GaAs power PHEMT process, this 4-stage amplifier achieved a linear gain of 19 dB over the 36 to 45 GHz frequency range, with an output power at 1-dB gain compression of 26 dBm (P-1dB=400 mW), and a saturated output power of 0.5 Watt (Psat=27 dBm), for a chip size of only 2.25 mm2 (1.25 × 1.8 mm2). Compared to state-of-the-art power amplifier MMICs operating in the 36-43 GHz frequency range, the combined output power- and gain- densities per chip area are nearly a factor two higher, namely 220 mW/mm2 and 8.5 dB/mm,sup>2.
Keywords
Frequency; Gallium arsenide; High power amplifiers; MIM capacitors; MMICs; Optical amplifiers; PHEMTs; Power amplifiers; Shunt (electrical); Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339227
Filename
4140307
Link To Document