Title :
16Mb Split Gate Flash Memory with Improved Process Window
Author :
Yater, J. ; Suhail, M. ; Kang, Shih-Tsung ; Shen, Jianbing ; Hong, Chuan ; Merchant, T. ; Gasquet, R.R.H. ; Loiko, K. ; Winstead, B. ; Williams, S. ; Rossow, M. ; Malloch, W. ; Syzdek, R. ; Chindalore, G.
Author_Institution :
Technol. Solutions Organ., Freescale Semicond., Austin, TX
Abstract :
This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.
Keywords :
flash memories; nanostructured materials; nanotechnology; storage media; Si; bitcell optimizations; drive current; memory size 16 MByte; memory size 32 MByte; nanocrystal memories; process window; reliability; split gate flash memory; Character generation; Degradation; Flash memory; Implants; Memory architecture; Nanocrystals; Robustness; Silicon; Split gate flash memory cells; Voltage;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090570
