Title :
Local structure of AgOx thin layers generating optical near-field
Author :
Kolobov, A.V. ; Buechel, D. ; Fons, P. ; Tominaga, J.
Author_Institution :
AIST Central, Tsukuba, Japan
Abstract :
Discovery of near-field generation by plasmons excited in thin AgOx layers made them important components in advanced optical technologies such as Super-RENS (H. Fuji et al, Jpn. J. Appl. Phys., vol. 39, p. 980, 2000) and the purely optical photonic transistor (J. Tominaga et al, Appl. Phys. Lett., vol. 78, p. 2417, 2001). In order to unravel the nanometer-scale mechanism of the silver nanoparticle formation upon photo-induced decomposition of the AgOx layer and its relationship with the plasmon generation efficiency, knowledge of the local structure of as-deposited AgOx layers and its modification upon thermal annealing and optical initialization is of utmost importance. A unique technique which allows determination of the local structure with atomic selectivity in both crystalline and amorphous states is X-ray absorption fine structure (XAFS) spectroscopy. In this paper, we present the results of the first such study applied to AgOx thin layers.
Keywords :
EXAFS; amorphous state; annealing; decomposition; nanoparticles; optical films; silver compounds; surface plasmons; surface structure; Ag2O; AgO; AgOx thin layers; EXAFS; Si; Super-RENS; X-ray absorption fine structure spectroscopy; XAFS; amorphous state; as-deposited AgOx layers; atomic selectivity; crystalline state; local structure; optical initialization; optical near-field generation; optical technologies; photo-induced decomposition; plasmon excitation; plasmon generation efficiency; purely-optical photonic transistor; silver nanoparticle formation; thermal annealing; Amorphous materials; Annealing; Atom optics; Atomic layer deposition; Crystallization; Optical devices; Plasmons; Silver; Thermal decomposition; Transistors;
Conference_Titel :
Optical Memory and Optical Data Storage Topical Meeting, 2002. International Symposium on
Print_ISBN :
0-7803-7379-0
DOI :
10.1109/OMODS.2002.1028617