DocumentCode
2169204
Title
Modeling of end-of-range (EOR) defects for indium channel engineering
Author
Noda, T.
Author_Institution
ULSI Process Technol. Dev. Center, Matsushita Electr. Ind. Co. Ltd, Kyoto, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
A physical model of end-of-range (EOR) defects for indium channel engineering is presented. The model is compared to experimental results. High dose implant damage induces the indium segregation to EOR defects. This segregation is correlated to the deactivation of indium in the vicinity of the S/D junction. This model successfully predicts these behaviors that are essential for indium channel engineering.
Keywords
dislocation loops; elemental semiconductors; indium; interstitials; ion implantation; segregation; semiconductor process modelling; EOR defects; In channel engineering; In deactivation; In segregation; dislocation loops; end-of-range defects; high dose implant damage; interstitials; physical model; source/drain junction; Amorphous materials; Annealing; Doping profiles; Implants; Indium; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979644
Filename
979644
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