Title :
Modeling of end-of-range (EOR) defects for indium channel engineering
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electr. Ind. Co. Ltd, Kyoto, Japan
Abstract :
A physical model of end-of-range (EOR) defects for indium channel engineering is presented. The model is compared to experimental results. High dose implant damage induces the indium segregation to EOR defects. This segregation is correlated to the deactivation of indium in the vicinity of the S/D junction. This model successfully predicts these behaviors that are essential for indium channel engineering.
Keywords :
dislocation loops; elemental semiconductors; indium; interstitials; ion implantation; segregation; semiconductor process modelling; EOR defects; In channel engineering; In deactivation; In segregation; dislocation loops; end-of-range defects; high dose implant damage; interstitials; physical model; source/drain junction; Amorphous materials; Annealing; Doping profiles; Implants; Indium; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979644
