Author :
Verma, Sarves ; Bersuker, Gennadi ; Gilmer, David C. ; Padovani, Andrea ; Park, Hokyung ; Nainani, Aneesh ; Heh, Dawei ; Huang, Jeff ; Jiang, Jack ; Parat, Krishna ; Kirsch, Paul D. ; Larcher, Luca ; Tseng, Hsing-Huang ; Saraswat, Krishna C. ; Jammy, Raj
Abstract :
We demonstrate for the first time a fluorine incorporated band- engineered (BE) tunnel oxide (SiO2/HfSiO/SiO2) TANOS with excellent program / erase (P/E) characteristics and endurance to 105 cycles. Incorporating fluorine in the tunnel dielectric improves Si/SiO2 interface resulting in excellent endurance of nearly constant over 3 V P/E window for at least 105 cycles. Fluorine also reduces interface state generation during retention by ~20%. Furthermore, Fluorine passivates bulk traps leading to as much as ~10times higher charge to breakdown (Qbd) and ~10-50times lower interface state density (Dit). Fluorine passivation for BE-TANOS is significant because it improves reliability assisting implementation of TANOS flash NVM beyond the 20 nm node.
Keywords :
dielectric materials; fluorine; hafnium compounds; passivation; random-access storage; reliability; silicon compounds; SiO2-HfSiO-SiO2:F; TANOS flash NVM; fluorine incorporated band engineered tunnel TANOS; interface state density; nonvolatile memory; passivation; program-erase characteristics; reliability; tunnel dielectric; Aluminum oxide; Annealing; Capacitance-voltage characteristics; Design for quality; Dielectrics; Electric breakdown; Interface states; MOS capacitors; Nonvolatile memory; Passivation;
