ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology

Author

Shum, D. ; Jaschke, G. ; Canning, M. ; Kakoschke, R. ; Duschl, R. ; Sikorski, R. ; Erler, F. ; Stiftinger, M. ; Duch, A. ; Power, J.R. ; Tempel, G. ; Strenz, R. ; Allinger, R.

Author_Institution

Infineon Technol. Dresden GmbH, Dresden

fYear

2009

fDate

10-14 May 2009

Firstpage

1

Lastpage

4

Abstract

We present aluminum oxide (AI₂O₃) as high-k Inter-Poly Dielectric (IPD) in a proven 0.13 mum based embedded Flash (eFlash) technology. Full functionality has been demonstrated from a 400Kbyte product demonstrator for the first time published so far. The AI₂O₃ layer was formed through Atomic-Layer Deposition (ALD) and the influence of parameters such as precursor, deposition temperature, feed-time and Si content on the product functionality have been determined systematically. Vigorous industrial reliability assessment was conducted throughout and promising retention and endurance have been shown. The results demonstrate AI₂O₃ IPD readiness for eFlash products without additional integration issues or yield degradation.

Keywords

aluminium compounds; atomic layer deposition; flash memories; high-k dielectric thin films; reliability; Al₂O₃; atomic layer deposition; eFlash products; embedded flash technology; endurance; high-k inter-poly dielectric; industrial reliability assessment; product demonstrator; retention; size 0.13 mum; Aluminum oxide; CMOS technology; Circuits; Costs; High K dielectric materials; High-K gate dielectrics; Oxidation; Semiconductor films; Temperature; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop, 2009. IMW '09. IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-3762-7

Type

conf

DOI

10.1109/IMW.2009.5090578

Filename

5090578