DocumentCode
2169329
Title
Design and Calculation of Micromachined Silicon Condenser Microphone with Free Floating Diaphragm and Gold Backplate
Author
Dong, Jian ; Ji, Shiming ; Zhang, Libin
Author_Institution
MOE Key Lab. of Mech. Manuf. & Autom., Zhejiang Univ. of Technol., Hangzhou
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
83
Lastpage
88
Abstract
A micromachined condenser microphone with a free floating sensing diaphragm and a perforated thick gold backplate is presented. The diaphragm consists of a heavily doped layer of polycrystalline silicon and two layers of low stress silicon nitride. It is fabricated using low-pressure chemical vapor deposition (LPCVD). One end of rectangled sensing diaphragm sticks on silicon substrate while the other parts float from substrate, so that the intrinsic stress of diaphragm can be released. The gold backplate is fabricated using a photoresist-molded electroplating technology and perforated with circular vent holes. Perforated circular holes on backplate are laid out as hexagon to adjust air-gap damping between diaphragm and backplate to critical damping. Calculation and analysis show that the microphone has the open-circuit sensitivity of 13.78 mv/Pa at 5 V bias voltage reaches, the pull-in voltage of 31.85 V and the frequency bandwidth ranging from 0 to 142.3 KHz. All these performances of microphone can meet with the requirements of consumers.
Keywords
chemical vapour deposition; diaphragms; micromachining; microphones; air-gap damping; bandwidth 0 kHz to 142.3 kHz; circular vent holes; free floating sensing diaphragm; frequency bandwidth; intrinsic stress; low pressure chemical vapor deposition; micromachined silicon condenser microphone; open-circuit sensitivity; perforated circular holes; perforated thick gold backplate; photoresist-molded electroplating technology; polycrystalline silicon; rectangled sensing diaphragm; silicon nitride; silicon substrate; voltage 31.85 V; voltage 5 V; Air gaps; Chemical technology; Chemical vapor deposition; Damping; Gold; Microphones; Silicon; Stress; Vents; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Mechtronic and Embedded Systems and Applications, 2008. MESA 2008. IEEE/ASME International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2367-5
Electronic_ISBN
978-1-4244-2368-2
Type
conf
DOI
10.1109/MESA.2008.4735709
Filename
4735709
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