Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Author

Liu, C.H. ; Lee, M.T. ; Chih-Yung Lin ; Chen, J. ; Schruefer, K. ; Brighten, J. ; Rovedo, N. ; Hook, T.B. ; Khare, M.V. ; Shih-Fen Huang ; Wann, C. ; Tze-chiang Chen ; Ning, T.H.

Author_Institution

United Microelectron. Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by excellent agreement between the fitted curves and experiments for ultrathin gate dielectrics (1.7 nm - 3.3 nm) fabricated by different processes. Among the various gate dielectrics under consideration, RPN (remote plasma nitrided oxide) is most resistant to NBTI stress.

Keywords

MOSFET; dielectric thin films; nitridation; semiconductor device models; semiconductor device reliability; 1.7 to 3.3 nm; NBTI mechanism; SiO/sub 2/; SiON; degradation mode resistance; degree of degradation; gate dielectrics; generalized model; heavily-nitrided oxide films; negative bias temperature instability; pMOSFETs; process dependence; remote plasma nitrided oxide; thermally-grown oxide films; threshold voltage shift; ultrathin gate dielectrics; Dielectrics; MOSFETs; Microelectronics; Negative bias temperature instability; Niobium compounds; Stress measurement; Thermal degradation; Thermal stresses; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979649

Filename

979649