Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz

Author

Cheon Soo Kim ; Joung-Woo Park ; Hyun Kyu Yu

Author_Institution

Microelec. Tech. Lab., ETRI, Taejon, South Korea

fYear

2001

fDate

2-5 Dec. 2001

Abstract

New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.

Keywords

MOS integrated circuits; MOSFET; interference suppression; isolation technology; power amplifiers; 0.5 GHz to 20 GHz; 0.5 to 20 GHz; 14.8 dB; 19.3 dB; 2 GHz; 26 V; 3 GHz; channel width 5 mm; high power RF amplifier; low temperature deep trench technology; maximum peak power 30 dBm; signal gain 14.8 dB; signal gain 19.3 dB; trenched sinker LDMOSFET structure; Base stations; Fabrication; High power amplifiers; Inductors; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Space technology; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979655

Filename

979655