• DocumentCode
    2169552
  • Title

    Current Compliance-Free Resistive Switching in Nonstoichiometric CeOx Films for Nonvolatile Memory Application

  • Author

    Liu, L.F. ; Sun, X. ; Sun, B. ; Kang, J.F. ; Wang, Y. ; Liu, X.Y. ; Han, R.Q. ; Xiong, G.C.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2009
  • fDate
    10-14 May 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
  • Keywords
    cerium compounds; integrated circuit design; integrated memory circuits; random-access storage; stoichiometry; CeOx; RRAM circuit design; compliance-free resistive switching; nonstoichiometric cerium oxide film; nonvolatile memory application; resistance random access memory; stoichiometric cerium oxide film; Electric resistance; Electrodes; Nonvolatile memory; Protection; Pulsed laser deposition; Semiconductor films; Sun; Tellurium; Voltage; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop, 2009. IMW '09. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-3762-7
  • Type

    conf

  • DOI
    10.1109/IMW.2009.5090586
  • Filename
    5090586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2169552