Title :
Current Compliance-Free Resistive Switching in Nonstoichiometric CeOx Films for Nonvolatile Memory Application
Author :
Liu, L.F. ; Sun, X. ; Sun, B. ; Kang, J.F. ; Wang, Y. ; Liu, X.Y. ; Han, R.Q. ; Xiong, G.C.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
Keywords :
cerium compounds; integrated circuit design; integrated memory circuits; random-access storage; stoichiometry; CeOx; RRAM circuit design; compliance-free resistive switching; nonstoichiometric cerium oxide film; nonvolatile memory application; resistance random access memory; stoichiometric cerium oxide film; Electric resistance; Electrodes; Nonvolatile memory; Protection; Pulsed laser deposition; Semiconductor films; Sun; Tellurium; Voltage; X-ray scattering;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090586
