Integrated antennas on Si, proton-implanted Si and Si-on-quartz

Author

Chan, K.T. ; Chin, A. ; Chen, Y.B. ; Lin, Y.-D. ; Duh, T.S. ; Lin, W.J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

High performance antennas have been realized on proton-implanted Si with 10/sup 6/ /spl Omega/-cm resistivity. Sharp antenna resonance and low loss up to 20 GHz are observed indicating excellent antenna quality. In contrast, very poor antenna characteristics are found on conventional oxide-isolated Si because of the lossy substrate.

Keywords

antenna radiation patterns; coplanar transmission lines; elemental semiconductors; ion implantation; losses; microwave antennas; silicon; 10 to 20 GHz; 1E6 ohmcm; Si-SiO/sub 2/; Si-on-quartz; Si:H; antenna quality; coplanar transmission line structure; high performance antenna; integrated antennas; lossy substrate; low loss; meander antennas; oxide-isolated Si; planar inverted-F antennas; proton-implanted Si; radiation pattern; sharp antenna resonance; Antenna measurements; Conductivity; Dielectric loss measurement; Dielectric resonator antennas; Dielectric substrates; Loss measurement; Radio frequency; Resonance; Transmission line measurements; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979659

Filename

979659