• DocumentCode
    2169575
  • Title

    Dual Layer Pt Metal Nanocrystal Flash for Multi-Level-Cell NAND Application

  • Author

    Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Hofmann, R. ; Mahapatra, Souvik

  • Author_Institution
    Dept. of Electr. Eng., IIT Bombay, Mumbai
  • fYear
    2009
  • fDate
    10-14 May 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 104 cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
  • Keywords
    flash memories; nanoelectronics; nanostructured materials; platinum; reliability; EEPROM; Pt; dual layer metal nanocrystal flash; gate bias accelerated retention; high-density Flash cells; memory density; read disturb; reliability; Acceleration; Aluminum oxide; Character generation; EPROM; Electric breakdown; Electrons; Fabrication; Nanocrystals; Nonvolatile memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop, 2009. IMW '09. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-3762-7
  • Type

    conf

  • DOI
    10.1109/IMW.2009.5090587
  • Filename
    5090587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2169575