Title :
FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications
Author :
PUGET, Sophie ; BOSSU, Germain ; Fenouiller-Beranger, C. ; Perreau, Pierre ; Masson, Pascal ; Mazoyer, Pascale ; Lorenzini, Philippe ; Portal, Jean-Michel ; BOUCHAKOUR, Rachid ; Skotnicki, Thomas
Author_Institution :
STMicroelectronics, Crolles
Abstract :
A Capacitorless IT-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time on FDSOI substrate, 9.5 nm silicon film and 19 nm BOX. 20 nm gate scaling improves 20% memory effect amplitude. GIDL mechanism allows low bias, low power, fast write time and does not affect intrinsic retention time. A similar value of 10 ms at 85degC is obtained like for impact ionization (II) optimised devices.
Keywords :
DRAM chips; low-power electronics; silicon-on-insulator; FDSOI floating body cell eDRAM; GIDL mechanism; capacitorless 1T-DRAM cell; gate-induced drain-leakage; low power application; size 19 nm; size 20 nm; size 9.5 nm; write operation; Diodes; Energy consumption; Impact ionization; Semiconductor films; Silicon; Steady-state; Substrates; Transistors; Tunneling; Very large scale integration;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090590
