Title :
Temperature-based phase change memory model for pulsing scheme assessment
Author :
Liao, Yi-Bo ; Lin, Jun-Tin ; Chiang, Meng-Hsueh
Author_Institution :
Dept. of Electron. Eng., Nat. Ilan Univ., Ilan
Abstract :
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first time the input current pulsing scheme for PCM programming can be significantly simplified via the unique intrinsic thermal memory effect. The model is implemented in HSPICE using Verilog-A, which is flexible and portable for different circuit simulators. As PCM technology is emerging, the predictive compact model can expedite the novel technology development.
Keywords :
SPICE; electrical conductivity; phase change materials; semiconductor storage; thermal conductivity; HSPICE; PCM model; Verilog-A; electrical conductivities; input current pulsing scheme; intrinsic thermal memory effect; nonconventional circuit design technique; phase change memory model; pulsing scheme assessment; thermal conductivities; Circuit synthesis; Cooling; Flexible printed circuits; Hardware design languages; Heating; Phase change materials; Phase change memory; Physics; Temperature; Thermal conductivity; Phase change memory (PCM); SPICE; Verilog-A; compact model;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567278
