From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

Author

Buckley, J. ; Pro, T. ; Barattin, R. ; Calborean, A. ; Huang, K. ; Aiello, V. ; Nicotra, G. ; Gély, M. ; Delapierre, G. ; Jalaguier, E. ; Duclairoir, F. ; Chevalier, N. ; Mariolle, D. ; Spinella, C. ; Lombardo, S. ; Blaise, P. ; Maldivi, P. ; Ghibaudo, G.

Author_Institution

CEA-LETI-MINATEC, CEA-INAC, Grenoble

fYear

2009

fDate

10-14 May 2009

Firstpage

1

Lastpage

4

Abstract

In this paper an extensive investigation of hybrid molecular/silicon field-effect memories is presented, where Redox Ferrocene (Fc) molecules play the role of the memory charge storage nodes. Engineering of the organic linkers between Fc and Si is achieved by grafting Fc with different linker lengths. The study shows a clear correlation between results from atomistic computational Density Functional Theory (DFT), electrochemical measurements (Cyclic Voltammetry) and electrical data obtained by a detailed study on Pseudo-MOS devices. Physical- chemical analyses (Atomic Force Microscopy, high-resolution Transmission Electron Microscopy, X-Ray Photoelectron Spectroscopy), were used to monitor the molecular layers.

Keywords

MOS memory circuits; X-ray photoelectron spectra; atomic force microscopy; density functional theory; elemental semiconductors; organic semiconductors; silicon; transmission electron microscopy; voltammetry (chemical analysis); Redox Ferrocene molecules; X-ray photoelectron spectroscopy; atomic force microscopy; atomistic computational density functional theory; charge storage nodes; cyclic voltammetry; electrochemical measurements; high-resolution transmission electron microscopy; hybrid molecular/silicon field-effect memories; molecular layers; organic linkers; pseudo-MOS devices; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Chemical analysis; Density functional theory; Density measurement; Electric variables measurement; Photoelectron microscopy; Silicon; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop, 2009. IMW '09. IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-3762-7

Type

conf

DOI

10.1109/IMW.2009.5090591

Filename

5090591