Title :
Transconductance enhancement of Si nanowire transistors by oxide-induced strain
Author :
Seike, A. ; Tange, T. ; Sano, Itaru ; Sugiura, Yuta ; Tsuchida, I. ; Ohta, Hitoyoshi ; Watanabe, Toshio ; Kosemura, D. ; Ogura, Akira ; Ohdomari, I. ; Tomoyuki, T.
Author_Institution :
Fac. of Sci. & Eng., Waseda Univ., Tokyo
Abstract :
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.
Keywords :
elemental semiconductors; field effect transistors; nanowires; silicon; -type nanowire field-effect-transistors; PADOX approach; Si; Si nanowire transistors; n-nwFET; n-type nanowire field-effect-transistors; oxide-induced strain; pattern dependant oxidation; three-dimensional molecular dynamics simulation; transconductance enhancement; CMOS technology; Capacitive sensors; Displays; FETs; MOSFET circuits; Nanoscale devices; Physics; Strain control; Tensile strain; Transconductance; CMOS; PADOX; nanowire; strain; transconductance enhancement; transistors;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567280
