Title :
High performance 0.1 /spl mu/m PD SOI tunneling-biased MOSFETs (TBMOS)
Author :
Kuo-Nan Yang ; Yi-Lin Chan ; Yu-Lin Chu ; Hou-Yu Chen ; Fu-Liang Yang ; Chenming Hu
Author_Institution :
TSMC, Hsin-Chu, Taiwan
Abstract :
Proposes a new structure of partially-depleted SOI MOSFETs tunneling-biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (/spl sim/66 mV/dec), and >15% increase in I/sub D,SAT/. TBMOS also has better hot carrier immunity than body grounded device.
Keywords :
MOSFET; hot carriers; silicon-on-insulator; tunnelling; 0.1 micron; Si; TBMOS; floating body potential; hot carrier immunity; partially-depleted SOI MOSFETs; polysilicon gate; tunneling-biased MOSFETs; Displays; Electrons; Hot carriers; Immune system; MOSFETs; Microelectronics; Subthreshold current; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979668
