Novel fully-depleted SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

Author

Tezuka, T. ; Sugiyama, N. ; Mizuno, T. ; Takagi, S.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Novel strained SiGe-on-insulator (SGOI) pMOSFETs as well as a new fabrication technique of the SGOI substrates are demonstrated. The ultrathin strained SiGe as a channel layer is directly sandwiched by gate oxide and buried oxide layers. The mobility enhancement of 2.3 times higher than the universal mobility has been obtained for the p-MOSFET with a 19 nm-thick Si/sub 0.58/Ge/sub 042/ channel layer, which is formed by high-temperature oxidation of a Si/sub 0.9/Ge/sub 0.1/ layer grown on a Si-on-insulator (SOI) substrates. The concept of fully-depleted SGOI MOSFETs with the simple single-layer structure is promising for scaled SOI p-MOSFETs with high current drive.

Keywords

CMOS integrated circuits; Ge-Si alloys; MOSFET; carrier mobility; integrated circuit technology; oxidation; semiconductor materials; semiconductor-insulator boundaries; substrates; Ge-enrichment technique; PMOS devices; SGOI substrates; SOI substrates; Si; Si/sub 0.58/Ge/sub 0.42/; Si/sub 0.9/Ge/sub 0.1/; buried oxide layer; fabrication technique; fully-depleted SiGe-on-insulator p-MOSFETs; gate oxide layer; high current drive; high-temperature oxidation; mobility enhancement; p-channel MOSFET; scaled SOI pMOSFETs; single-layer structure; strained SiGe-on-insulator; ultrathin strained SiGe channel layer; Atomic layer deposition; Capacitance; Circuit optimization; Fabrication; Germanium silicon alloys; Laboratories; Large scale integration; MOSFET circuits; Oxidation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979673

Filename

979673