• DocumentCode
    2169922
  • Title

    Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

  • Author

    Tallarida, G. ; Huby, N. ; Kutrzeba-Kotowska, B. ; Spiga, S. ; Arcari, M. ; Csaba, G. ; Lugli, P. ; Redaelli, A. ; Bez, R.

  • Author_Institution
    Lab. Naz. MDM, CNR-INFM, Agrate Brianza
  • fYear
    2009
  • fDate
    10-14 May 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown.
  • Keywords
    II-VI semiconductors; Schottky diodes; cryogenic electronics; nitrogen compounds; random-access storage; rectification; wide band gap semiconductors; zinc compounds; NiO; Schottky junction fabrication; ZnO; crossbar nonvolatile memory devices; forward current density; low-temperature rectifying junction; switching memory element; Current density; Electrodes; Gold; Material storage; Nonvolatile memory; Ohmic contacts; Schottky diodes; Semiconductor diodes; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop, 2009. IMW '09. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-3762-7
  • Type

    conf

  • DOI
    10.1109/IMW.2009.5090598
  • Filename
    5090598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2169922