0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

A new super-thin power amplifier (PA) module has been developed for W-CDMA mobile handsets. The PA module consists of an InGaP/GaAs HBT MMIC and a 50-¿ output matching circuit on polyimide film, which is the first application of such film as a PA module substrate. The key features of the PA substrate are thinness, low thermal resistance, and low cost. As a result, the PA module is only 6.0 x 6.0 x 0.8 mm3 (0.03cc) and meets the specifications of W-CDMA with a high power-added efficiency (PAE) of 43%, a gain of 27 dB, and an adjacent channel leakage power ratio (ACLR) of ¿36 dBc at an offset frequency of 5 MHz at a Pout of 26 dBm under a supply voltage of 3.5 V with 3.84 Mcps HPSK modulation.