DocumentCode :
2169990
Title :
NAND Flash Scaling Beyond 20nm
Author :
Koh, Yohwan
Author_Institution :
Flash Dev. Div., Hynix Semicond. Inc., Icheon
fYear :
2009
fDate :
10-14 May 2009
Firstpage :
1
Lastpage :
3
Abstract :
With the advent of prevailing mobile devices in our daily lives, the densities of nonvolatile memory, especially NAND Flash suitable for mobile devices become higher and higher, and Flash memory applications will be constantly increased in the future due to their non-volatility and high capacity. Therefore it is very meaningful and important to summarize where NAND Flash memory technology is now, what kinds of challenges have to be overcome, and what the promising candidates will be in the future. In this paper, we present the major scaling issues and performance requirements for NAND Flash with advancing technology nodes, and we also show directions for new emerging technologies beyond 20 nm technology node.
Keywords :
NAND circuits; flash memories; NAND flash scaling; mobile device; nonvolatile memory; size 20 nm; Doping; Error correction codes; Etching; Flash memory; Fluctuations; Interference; Lithography; Nonvolatile memory; Space technology; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
Type :
conf
DOI :
10.1109/IMW.2009.5090600
Filename :
5090600
Link To Document :
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