DocumentCode :
2170020
Title :
Fabrication and adhesion of low stress electroless Ni-Cu-P bump on copper pad
Author :
Chen, Chun-Jen ; Lin, Kwang-Lung
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2000
fDate :
2000
Firstpage :
874
Lastpage :
877
Abstract :
The addition of copper into electroless Ni-P deposits will improve the thermal stability and the solderability of the deposits. However, it also results in excess tensile stresses of the deposits. In this study, a nearly stress-free amorphous electroless Ni-Cu-P deposit (Ni-15Cu-12P) on copper is produced when one adds 10 g/l saccharin in the Ni-Cu-P solution. The addition of saccharin inhibits the coalescence of electroless Ni-Cu-P nodules and thus decreases the tensile stress of the deposit. Furthermore, electroless Ni-Cu-P bumps can be selectively deposited on Si/Ti/Cu pads by using dimethylamine borane (DMAB) as activators. The shear strength of the Cu/Ni-Cu-P bumps (100 μm×100 μm area and 10 μm height) on silicon wafer is above 100 g, and the fracture occurs at the Ti/Cu interface
Keywords :
adhesion; copper; copper compounds; electroless deposited coatings; internal stresses; nickel compounds; shear strength; soldering; thermal stability; Cu; Ni-Cu-P; adhesion; copper pad; dimethylamine borane activator; electroless Ni-Cu-P bump; fabrication; saccharin; shear strength; solderability; tensile stress; thermal stability; Adhesives; Amorphous materials; Atherosclerosis; Copper; Fabrication; Nickel; Palladium; Surface treatment; Tensile stress; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
Type :
conf
DOI :
10.1109/ECTC.2000.853265
Filename :
853265
Link To Document :
بازگشت