Title :
Relaxation Oscillation in GST-Based Phase Change Memory Devices
Author :
Jackson, D.C.S. ; Nardone, M. ; Karpov, V. ; Karpov, I.
Author_Institution :
Univ. of Toledo, Toledo, OH
Abstract :
The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.
Keywords :
phase change memories; relaxation oscillators; GST-based phase change memory devices; applied voltage; device thickness; load resistance; relaxation oscillations; Atomic measurements; Crystallization; Electrical resistance measurement; Energy barrier; Phase change materials; Phase change memory; Threshold voltage; Time measurement; Virtual reality; Voltage measurement;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090605
