• DocumentCode
    2170128
  • Title

    Comparison of different extraction methods of small-signal parameters for SOI MOSFETs.

  • Author

    Dehan, M. ; Raskin, J.P. ; Vanhoenacker-Janvier, D.

  • Author_Institution
    Université catholique de Louvain, Microwave Laboratory, 3 place du Levant, B-1348 Louvain-la-Neuve, e-mail: dehan@emic.ucl.ac.be.
  • fYear
    2002
  • fDate
    23-26 Sept. 2002
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    For the first time, a comparison is made between different equivalent circuits and different extraction procedures using simulated and measured Silicon-on-Insulator (SOI) MOSFETs. The methods, which will be described, are divided into three categories: the depletion methods, the inversion methods also called cold-FET methods and the saturation methods. Moreover, a novel technique will be presented for the extraction of parasitic capacitances of a MOSFET in deep depletion.
  • Keywords
    Circuit simulation; Design optimization; Equivalent circuits; Integrated circuit interconnections; Laboratories; MOSFETs; Parasitic capacitance; Radio frequency; Silicon on insulator technology; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2002. 32nd European
  • Conference_Location
    Milan, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.2002.339268
  • Filename
    4140348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2170128