Comparison of different extraction methods of small-signal parameters for SOI MOSFETs.

For the first time, a comparison is made between different equivalent circuits and different extraction procedures using simulated and measured Silicon-on-Insulator (SOI) MOSFETs. The methods, which will be described, are divided into three categories: the depletion methods, the inversion methods also called cold-FET methods and the saturation methods. Moreover, a novel technique will be presented for the extraction of parasitic capacitances of a MOSFET in deep depletion.