Title :
A high performance switched-LNA IC for CDMA handset receiver applications
Author :
Moroney, R. ; Harrington, K. ; Struble, W. ; Khabbaz, B. ; Murphy, M.
Author_Institution :
Integrated Semicon. Bus. Unit, AMP M/A-COM, Lowell, MA, USA
Abstract :
This paper reports on a low voltage, low noise, high linearity amplifier with on-chip bypass switch to provide extended dynamic range. The amplifier is designed for the wide dynamic range requirements of cellular band CDMA handsets. In high gain mode, the amplifier achieves 16.5 dB gain, 1.5 dB noise figure and 0 dBm input IP3 with just 10 mA of current from a 2.7 V supply. In bypass mode, the input IP3 increases to +27 dBm with <5 dB insertion loss and <100 /spl mu/A of DC current. This patented M/A-COM topology switched-LNA is fabricated on M/A-COM´s 0.5 /spl mu/m low noise MESFET process and packaged in a low cost 8 lead MSOP plastic package.
Keywords :
MESFET integrated circuits; amplifiers; cellular radio; code division multiple access; integrated circuit noise; switched networks; telephone sets; 0.5 micron; 1.5 dB; 16.5 dB; 2.7 V; CDMA handset receiver; DC current; M/A-COM topology; MESFET process; MSOP plastic package; cellular band; dynamic range; gain; input IP3; insertion loss; linearity; low voltage low noise amplifier; noise figure; on-chip bypass switch; switched-LNA IC; Dynamic range; Gain; Integrated circuit noise; Linearity; Low voltage; Low-noise amplifiers; Multiaccess communication; Plastic packaging; Switches; Telephone sets;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682044
