Title :
Study of millimeter wave ALGaN/AlN/GaN HEMT
Author :
Cheng, Zhiqun ; Liu, Tang ; Jin, Liwei ; Feng, Zhihong ; Song, Jianbo ; Yin, Jiayun
Author_Institution :
Key Lab. of RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A novel structure AlGaN/AlN/GaN HEMT was proposed in the paper. The barrier layer´s thickness was optimized in order to increase characteristic frequency. TCAD software of Silvaco was using to simulate DC and AC performances of proposed device. Optimum size for barrier thickness was achieved after simulation. The proposed devices were fabricated and measured. Measured results are identical to simulated results for characteristic frequency.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave circuits; technology CAD (electronics); AC performance simulation; AlGaN-AlN-GaN; DC performance simulation; Silvaco; TCAD software; barrier layer thickness optimisation; millimeter wave HEMT; Aluminum gallium nitride; Fabrication; Frequency measurement; Gallium nitride; HEMTs; Logic gates; Semiconductor process modeling; AlGaN/AlN/GaN HEMT; barrier layer; characterestic frequency;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Ningbo
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6066377
