DocumentCode
2170312
Title
Study of millimeter wave ALGaN/AlN/GaN HEMT
Author
Cheng, Zhiqun ; Liu, Tang ; Jin, Liwei ; Feng, Zhihong ; Song, Jianbo ; Yin, Jiayun
Author_Institution
Key Lab. of RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou, China
fYear
2011
fDate
9-11 Sept. 2011
Firstpage
2306
Lastpage
2308
Abstract
A novel structure AlGaN/AlN/GaN HEMT was proposed in the paper. The barrier layer´s thickness was optimized in order to increase characteristic frequency. TCAD software of Silvaco was using to simulate DC and AC performances of proposed device. Optimum size for barrier thickness was achieved after simulation. The proposed devices were fabricated and measured. Measured results are identical to simulated results for characteristic frequency.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave circuits; technology CAD (electronics); AC performance simulation; AlGaN-AlN-GaN; DC performance simulation; Silvaco; TCAD software; barrier layer thickness optimisation; millimeter wave HEMT; Aluminum gallium nitride; Fabrication; Frequency measurement; Gallium nitride; HEMTs; Logic gates; Semiconductor process modeling; AlGaN/AlN/GaN HEMT; barrier layer; characterestic frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location
Ningbo
Print_ISBN
978-1-4577-0320-1
Type
conf
DOI
10.1109/ICECC.2011.6066377
Filename
6066377
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