Title :
Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing
Author :
Maszara, W.P. ; Gondran, C.F.H. ; Jackett-Murphy, S. ; Vasudev, P.K. ; Iyer, S.S. ; Anc, M.J.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We have conducted an investigation to evaluate the impact of both touch-polish and hydrogen annealing at different temperatures on the roughness, on the SOI film removal, as well as the impact of so processed surface on the integrity of gate oxide thermally grown on it, for SIMOX and BESOI material
Keywords :
SIMOX; annealing; polishing; silicon-on-insulator; surface topography; BESOI material; H2; SIMOX material; SOI film; hydrogen annealing; roughness; surface smoothing; thermal gate oxide; touch polishing; Annealing; Atomic measurements; Hydrogen; Rough surfaces; Silicon; Smoothing methods; Surface morphology; Surface roughness; Temperature; Wafer bonding;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634967
