DocumentCode
2170467
Title
25W C-Band Highly Efficient on Board Hybrid Amplifier
Author
Darbandi, A. ; Zoyo, M. ; Touchais, J.Y. ; Lévèque, H.
Author_Institution
Alcatel Space Industries BP 1187 26 avenue J.F. Champollion 31037 Toulouse France. Phone: (33) + 5.34.35 57.69, e-mail: alireza.darbandi-tehrani@space.alcatel.fr
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
A very high efficient, low distortion C-band power amplifier using a linear and non-linear models of the PHEMT devices has been developed. Single stage amplifier fabricated with 4×18mm gate width PHEMT devices exhibits a power output of 44 dBm at 2dB of gain compression, a linear gain of 11.5dB and an associated PAE from 50% to 52% in the frequency range of 3.6-3.9GHz. These excellent results are performed by developing an accurate non-linear model of the PHEMT device, the 2.5D electromagnetic simulation of the passive structures and optimizing the output matching network of the amplifier by using a high dielectric substrate with low insertion loss.
Keywords
Dielectric substrates; Electromagnetic devices; Electromagnetic modeling; Frequency; Gain; High power amplifiers; Impedance matching; Nonlinear distortion; PHEMTs; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339280
Filename
4140360
Link To Document