Coherent control of exciton in a single InAs/GaAs quantum dot

Author

Kono, Shunsuke ; Tomitat, Akihisa ; Fujikata, J. ; Saito, Hideaki ; Nishi, Kenichi

Author_Institution

NEC, Tsukuba

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

In this presentation, we observed the coherent optical nonlinear interaction of exciton in a single InAs/GaAs self-assembled QD by using coherent control technique at the wavelength 1127 nm, 4.2 K. Due to the large diameter of InAs QDs in the longer wavelength range, dipole moment of confined excitons is predicted to be large so that coherent optical interaction such as Rabi oscillation is expected to be observed. Large dipole moment is one of the most important criteria to realize strong interaction between photons and excitons in QDs.

Keywords

III-V semiconductors; excitons; gallium arsenide; indium compounds; nonlinear optics; optical materials; photoluminescence; self-assembly; semiconductor quantum dots; InAs-GaAs; InAs-GaAs quantum dot; Rabi oscillation; coherent control; coherent optical interaction; coherent optical nonlinear interaction; dipole moment; photon-exciton interaction; self-assembled QD; wavelength 1127 nm; Delay; Excitons; Gallium arsenide; Interference; Laser excitation; National electric code; Optical interferometry; Pulse modulation; Quantum dots; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386762

Filename

4386762