DocumentCode :
2170520
Title :
A Fully-Manufacturable 0.5μm SiGe BiCMOS Technology for Wireless Power Amplifier Applications
Author :
Ramachandran, V. ; Joseph, A.J. ; Johnson, J.B. ; Gallagher, M.D. ; Brandt, P.-O. ; Tilly, L. ; Greenberg, D.R. ; Ansley, W.E. ; Gogineni, U. ; Harame, D.L. ; Dunn, J.S.
Author_Institution :
IBM Microelectronics Division, Essex Junction, VT, vidhar@us.ibm.com
fYear :
2002
fDate :
23-26 Sept. 2002
Firstpage :
303
Lastpage :
306
Abstract :
We present for the first time a fully-manufacturable 0.5μm/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/PCS/WCDMA) power amplifier applications, highlighting HBT device design, safe-operating area, and module performance. This technology features a high- breakdown transistor (BVCBO > 20V), with fT exceeding 25GHz, along with a suite of device elements that is fully compatible with the IBM´s mature 0.5μm SiGe BiCMOS technology. PA design is discussed and hardware measurements presented demonstrating that this SiGe BiCMOS technology meets the demanding ruggedness, linearity and efficiency requirements for wireless PA applications.
Keywords :
BiCMOS integrated circuits; Electric breakdown; GSM; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Personal communication networks; Power amplifiers; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
Type :
conf
DOI :
10.1109/EUMA.2002.339282
Filename :
4140362
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2170520
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