Title :
Parallel electrical spin preparation in InGaAs/GaAs quantum dots with high fidelity
Author :
Löffler, W. ; Mauser, C. ; Höpcke, N. ; Kalt, H. ; Li, S. ; Passow, T. ; Reimer, H. ; Hetterich, M.
Author_Institution :
Univ. Karlsruhe, Karlsruhe
Abstract :
The concurrent initialization of spin-polarized electrons in several semiconductor quantum dots is of major importance for quantum information processing as well as for some spintronics applications. We realized the quantum match to the classical register storage, the quantum register, with a couple of self-organized semiconductor quantum dots. The first step is to initialize a single electron in each dot, all with the same spin orientation with respect to an external magnetic field.
Keywords :
III-V semiconductors; electron spin polarisation; gallium arsenide; indium compounds; magnetic semiconductors; semiconductor quantum dots; InGaAs-GaAs; InGaAs/GaAs quantum dots; external magnetic field; parallel electrical spin preparation; semiconductor quantum dots; spin-polarized electrons; Electrons; Gallium arsenide; Indium gallium arsenide; Information processing; Magnetic fields; Magnetoelectronics; Optical polarization; Quantum dots; Quantum mechanics; Semiconductor nanostructures;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386766